The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jun. 13, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
SHIN-ETSU CHEMICAL CO., LTD., Chiyoda-ku, JP;
Abstract
The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S). The quality of the trichlorosilane is determined based on the analysis results (S) and the trichlorosilane determined to be a good material (S: Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (). In case, the trichlorosilane determined to be a bad material (S: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes.