The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jul. 02, 2015
Applicants:
Sang-moon Lee, Yongin-si, KR;
Young-jin Cho, Yongin-si, KR;
Inventors:
Sang-moon Lee, Yongin-si, KR;
Young-jin Cho, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8258 (2006.01); H01L 27/092 (2006.01); H01L 27/15 (2006.01); H01L 29/267 (2006.01); H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8258 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/30625 (2013.01); H01L 21/8238 (2013.01); H01L 27/0605 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 27/15 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/267 (2013.01);
Abstract
A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.