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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9355900 B1

PDFFull Text
Date of Patent:
May. 31, 2016

Filed:

Jul. 20, 2015

Semiconductor device and method of manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masayuki Katagiri, Kanagawa, JP;

Yuichi Yamazaki, Tokyo, JP;

Tadashi Sakai, Kanagawa, JP;

Naoshi Sakuma, Kanagawa, JP;

Mariko Suzuki, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Peniel M Gumedzoe

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 51/00 (2006.01); C01B 31/02 (2006.01); H01L 51/44 (2006.01); H01L 29/06 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/76838 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); C01B 31/0206 (2013.01); H01L 29/0669 (2013.01); H01L 29/413 (2013.01); H01L 51/0048 (2013.01); H01L 51/444 (2013.01); H01L 2221/1094 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

Find Patent Forward Citations

Katagiri, Masayuki. (2016). Semiconductor device and method of manufacturing the same (U.S. Patent No. 9355900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9355900

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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