The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Aug. 17, 2012
Applicants:
Jong-won Hong, Hwaseong-si, KS (US);
Hei-seung Kim, Suwon-si, KR;
Kyoung-hee Nam, Seoul, KR;
In-sun Park, Seoul, KR;
Jong-myeong Lee, Seongnam-si, KR;
Inventors:
Jong-Won Hong, Hwaseong-si, KS (US);
Hei-Seung Kim, Suwon-si, KR;
Kyoung-hee Nam, Seoul, KR;
In-sun Park, Seoul, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 21/288 (2006.01); H01L 23/532 (2006.01); H01L 27/115 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); H01L 21/76847 (2013.01); H01L 21/76861 (2013.01); H01L 21/76864 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01L 23/53238 (2013.01); H01L 27/10897 (2013.01); H01L 27/11529 (2013.01); H01L 27/10894 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.