The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Mar. 17, 2014
Applicants:

Nattasamon Petchsang, Nonthaburi, TH;

Masaru Kuno, Granger, IN (US);

Vladimir Plashnitsa, Mishawaka, IN (US);

Inventors:

Nattasamon Petchsang, Nonthaburi, TH;

Masaru Kuno, Granger, IN (US);

Vladimir Plashnitsa, Mishawaka, IN (US);

Assignee:

University of Notre Dame du Lac, Notre Dame, IN (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/46 (2006.01); C30B 29/48 (2006.01); C30B 29/60 (2006.01); C30B 7/14 (2006.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); C30B 29/16 (2006.01); C30B 29/40 (2006.01); C30B 29/50 (2006.01); C30B 33/04 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02628 (2013.01); C30B 7/14 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); C30B 29/16 (2013.01); C30B 29/40 (2013.01); C30B 29/46 (2013.01); C30B 29/48 (2013.01); C30B 29/50 (2013.01); C30B 29/60 (2013.01); C30B 33/04 (2013.01); H01L 21/02521 (2013.01); H01L 21/02551 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02603 (2013.01); B82Y 40/00 (2013.01);
Abstract

The invention provides a method for assembling semiconducting nanowires, which method can include providing a mixture comprising a dielectric solvent and two or more semiconducting nanowires, wherein the semiconducting nanowires can be the same or different; exposing the mixture to an electrostatic charge under lighting conditions; and allowing macroscopic nanowire alignment to occur, wherein each nanowire is substantially oriented along the direction of the applied electric field.


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