The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

May. 23, 2014
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Christian Rivero, Rousset, FR;

Pascal Fornara, Pourrieres, FR;

Antonio di-Giacomo, Rousset, FR;

Brice Arrazat, Marignane, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01H 59/00 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01H 1/00 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01H 59/0009 (2013.01); H01H 1/0036 (2013.01); H01L 21/8221 (2013.01); H01L 27/0617 (2013.01); H01L 27/0688 (2013.01); H01H 2001/0068 (2013.01); H01H 2059/0054 (2013.01); H01L 23/522 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.


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