The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Sep. 19, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Koichiro Zaitsu, Kanagawa, JP;

Kosuke Tatsumura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 17/18 (2006.01); G11C 5/06 (2006.01); G11C 17/14 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 5/063 (2013.01); G11C 17/146 (2013.01);
Abstract

A semiconductor nonvolatile memory device of an embodiment includes: a plurality of transistors arranged in a matrix, the transistors in the same row being connected in series to form a transistor string having a first terminal and a second terminal; a plurality of first wiring lines each corresponding to one of the columns, and being connected to the gates of the transistors of the corresponding column; a common first electrode connected to each semiconductor region in which each transistor is disposed; and a write unit that selects one of the first wiring lines and one of the transistor strings, and applies a first voltage to the first electrode, a first write voltage to the selected first wiring line, a second voltage to the other first wiring lines, and a second write voltage to the first terminal and the second terminal of the selected transistor string in a write operation.


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