The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Oct. 24, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jong-Young Kim, Seoul, KR;

Ki Tae Park, Seongnam-si, KR;

Bo Geun Kim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5628 (2013.01);
Abstract

A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.


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