The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Dec. 14, 2015
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Pedram Khalili Amiri, Los Angeles, CA (US);
Kang L. Wang, Santa Monica, CA (US);
Kosmas Galatsis, Torrance, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G11C 11/1673 (2013.01);
Abstract
Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.