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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9354392 B1

PDFFull Text
Expired
Date of Patent:
May. 31, 2016

Filed:

Sep. 03, 2014

Semiconductor device and method for manufacturing the same

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventor:

Kazuhiko Horino, Hadano, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Smith, Gambrell & Russell, LLP.

Primary Examiner:

Armando Rodriguez

Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/122 (2006.01); H01L 21/02 (2006.01); G02B 6/13 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/131 (2013.01); G02B 6/136 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); G02B 2006/12097 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes the steps of preparing a substrate; forming first and second layers on the substrate; forming a suspended mask on the substrate by etching the first and second layers, the suspended mask including a shield portion having a space between the second layer and the substrate, a terrace portion being disposed apart from the shield portion, a supporting portion connecting the shield portion and the terrace portion, and an opening between the shield portion and the terrace portion, the shield portion extending in a first direction; and growing a semiconductor layer on a surface of the substrate in the first region and the fourth region using the suspended mask. The shield portion has a width varying in the first direction, and the semiconductor layer has a thickness varying in the first direction.

Find Patent Forward Citations

Horino, Kazuhiko. (2016). Semiconductor device and method for manufacturing the same (U.S. Patent No. 9354392). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9354392

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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