The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Aug. 01, 2012
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Abstract
The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device () of the present invention includes: an optical semiconductor electrode () including a conductor () and the NbON film () of the present invention disposed on the conductor (); a counter electrode () connected electrically to the conductor (); a water-containing electrolyte () disposed in contact with a surface of the NbON film () and a surface of the counter electrode (); and a container () containing the optical semiconductor electrode (), the counter electrode (), and the electrolyte (). In this device, hydrogen is generated by irradiating the NbON film () with light.