The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Nov. 10, 2011
Applicants:

Tatsuya Hinoki, Uji, JP;

Yi-hyun Park, Uji, JP;

Inventors:

Tatsuya Hinoki, Uji, JP;

Yi-Hyun Park, Uji, JP;

Assignee:

KYOTO UNIVERSITY, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/575 (2006.01); C04B 35/565 (2006.01); B32B 18/00 (2006.01); C04B 35/573 (2006.01); C04B 35/645 (2006.01); C04B 35/80 (2006.01); C04B 38/00 (2006.01); C04B 38/06 (2006.01); G21B 1/13 (2006.01); C04B 111/28 (2006.01); G21C 7/10 (2006.01); G21C 15/00 (2006.01); G21C 17/017 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
C04B 35/575 (2013.01); B32B 18/00 (2013.01); C04B 35/565 (2013.01); C04B 35/573 (2013.01); C04B 35/645 (2013.01); C04B 35/806 (2013.01); C04B 38/0032 (2013.01); C04B 38/068 (2013.01); G21B 1/13 (2013.01); C04B 2111/28 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/383 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3834 (2013.01); C04B 2235/422 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/5264 (2013.01); C04B 2235/614 (2013.01); C04B 2235/616 (2013.01); C04B 2235/662 (2013.01); C04B 2235/77 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/365 (2013.01); C04B 2237/38 (2013.01); G21C 7/10 (2013.01); G21C 15/00 (2013.01); G21C 17/017 (2013.01); H05H 2001/4695 (2013.01); Y02E 30/128 (2013.01);
Abstract

A SiC ceramic material includes a bundle of SiC continuous fibers in a porous SiC ceramic matrix, has thermal insulation properties, a high level of strength and a high degree of toughness. A SiC ceramic structure is made of the SiC ceramic material. It is produced by preparing a pressure-sintered compact using a slurry prepared by mixing SiC powder and carbon powder in a liquid and by gasifying and releasing the carbon powder. The SiC ceramic structure can be produced by heating a reaction preparation containing a bundle of SiC continuous fibers and Si powder to a temperature equal to or higher than the melting point of silicon causing a reaction of the carbon component and Si powder and thereby obtaining a reaction-sintered compact, and by gasifying and releasing the carbon component from the reaction-sintered compact. The SiC ceramic can be produced by a chemical vapor deposition method.


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