The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Mar. 09, 2012
Applicants:
Volodymyr Lysenko, Villeurbanne, FR;
Jed Kraiem, Bourgoin Jallieu, FR;
Mahdi Medjaoui, Argenteuil, FR;
Inventors:
Volodymyr Lysenko, Villeurbanne, FR;
Jed Kraiem, Bourgoin Jallieu, FR;
Mahdi Medjaoui, Argenteuil, FR;
Assignees:
INSTITUT NATIONAL des SCIENCES APPLIQUEES DE LYON, Villeurbanne, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
APOLLON SOLAR, Lyons, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/021 (2006.01); C01B 3/10 (2006.01); C25B 3/12 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C25F 3/12 (2006.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
C01B 33/021 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 3/10 (2013.01); C25F 3/12 (2013.01); B82Y 99/00 (2013.01);
Abstract
A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.