The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Apr. 01, 2014
Applicant:
Hanergy Holding Group Ltd., Beijing, CN;
Inventors:
Johannes Vlcek, San Francisco, CA (US);
Daniel R. Juliano, Santa Clara, CA (US);
Assignee:
BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05B 7/16 (2006.01); C23C 14/34 (2006.01); C23C 24/04 (2006.01); C22C 1/04 (2006.01);
U.S. Cl.
CPC ...
B05B 7/1626 (2013.01); C22C 1/0425 (2013.01); C23C 14/3414 (2013.01); C23C 24/04 (2013.01);
Abstract
A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 μm, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.