The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Dec. 08, 2014
Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Jun Okuno, Boise, ID (US);
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1293 (2013.01); H01L 45/08 (2013.01); H01L 45/1206 (2013.01); H01L 45/1226 (2013.01); H01L 45/16 (2013.01);
Abstract
Embodiments of the present invention describe a method for fabricating a memory device comprising an enlarged space between neighboring bottom electrodes comprising depositing a poly-silicon layer on a substrate depositing a carbon layer above the poly-silicon layer, patterning a photo-resist layer on the carbon layer, depositing a first spacer layer on the photo-resist layer and performing a modified photolithography process on the photo resist layer after etching back the spacer layer creating sidewalls.