The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 19, 2014
Microchip Technology Incorporated, Chandler, AZ (US);
James Walls, Mesa, AZ (US);
MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US);
Abstract
A resistive memory cell, e.g., a CBRAM or ReRAM cell, may include a top electrode, a bottom electrode having an elongated trench shape defining a pair of spaced-apart bottom electrode sidewalls, and an electrolyte switching region arranged between the top electrode and at least one of the bottom electrode sidewalls to provide a path for the formation of a conductive filament or vacancy chain from the at least one bottom electrode sidewall to the top electrode when a voltage bias is applied to the cell. In addition, a memory may include an array of resistive memory cells including a top electrode structure, a plurality of trench-style bottom electrodes extending in first direction, and a plurality of inverted-trench-style electrolyte switching regions extending perpendicular to the trench-style bottom electrodes to define a two-dimensional array of spaced-apart contact areas between the electrolyte switching regions and the bottom electrodes.