The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Mar. 05, 2014
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventors:

Takanobu Akagi, Tokyo, JP;

Tatsuma Saito, Tokyo, JP;

Mamoru Miyachi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.


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