The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Feb. 27, 2013
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Juhong Yang, Seoul, KR;

Dohwan Yang, Seoul, KR;

Ilhyoung Jung, Seoul, KR;

Jinah Kim, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/056 (2014.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022458 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/056 (2014.12); H01L 31/068 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract

A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.


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