The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jun. 27, 2012
Ryota Sekiguchi, Tokyo, JP;
Makoto Koto, Yokohama, JP;
Ryota Sekiguchi, Tokyo, JP;
Makoto Koto, Yokohama, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer; a first-conductive-type high carrier concentration layer; and a Schottky electrode and an ohmic electrode which are formed on a semiconductor surface. The low carrier layer has a carrier concentration that is lower than that of the high carrier layer. The diode element includes a first-conductive-type impurity introducing region formed below the ohmic electrode, and includes a second-conductive-type impurity introducing region so as not to be in electrical contact with the Schottky electrode on the semiconductor surface between the Schottky and the ohmic. The second-conductive-type region is in contact with the first-conductive-type region.