The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Nov. 15, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Naoki Kumagai, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A semiconductor device comprises an n+ type SiC semiconductor substrate, an n type low concentration drift layer of an SiC semiconductor on the substrate, p type channel regions selectively arranged in the drift layer with a specified distance between the channel regions, an n type source region selectively arranged in the channel region, a source electrode in common contact with the source region and the channel region, and a gate electrode disposed over the drift layer between two channel regions, and over a part of the channel region positioned between the drift layer and the source region intercalating a gate oxide film therebetween. The drift layer has a low concentration of at most 70% of the concentration that is required to exhibit a specified withstand voltage at a minimum ON resistance.