The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Oct. 04, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Markus Zundel, Egmating, DE;
Peter Brandl, Noetsch i. G., AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0878 (2013.01); H01L 29/105 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/66734 (2013.01); H01L 29/7803 (2013.01); H01L 29/7811 (2013.01); H01L 29/7815 (2013.01); H01L 29/0646 (2013.01);
Abstract
A semiconductor device includes a vertical IGFET in a first area of a semiconductor body, the vertical IGFET having a drift zone between a body zone and a drain electrode, the drift zone having a vertical dopant profile of a first conductivity type being a superposition of a first dopant profile declining with increasing distance from the drain electrode and dominating the vertical dopant profile in a first zone next to the drain electrode and a second dopant profile being a broadened peak dopant profile and dominating the vertical dopant profile in a second zone next to the body zone.