The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Dec. 15, 2011
Takayuki Hashimoto, Tokyo, JP;
Mutsuhiro Mori, Tokyo, JP;
Takayuki Hashimoto, Tokyo, JP;
Mutsuhiro Mori, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n-type drift layer; a p-type channel regionthat is arranged in contact with the surface side of this n-type drift layer; a gate electrodethat is provided in a trench T provided so as to penetrate this p-type channel regionand reach to the n-type drift layerthrough a gate insulating film; an n-type source regionthat is provided so as to contact the trench T on the surface side of the p-type channel region; a high-concentration n-type regionthat is arranged in contact with the back side of the n-type drift layer; and a high-concentration p-type regionthat is arranged in contact with the back side of this high-concentration n-type region; in which a junction of the high-concentration n-type regionand the high-concentration p-type regionis a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of 'snap back' and 'current concentration.'