The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jul. 04, 2013
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Jia Li, Shijiazhuang, CN;
Cui Wei, Shijiazhuang, CN;
Qingbin Liu, Shijiazhuang, CN;
Zezhao He, Shijiazhuang, CN;
Jingjing Wang, Shijiazhuang, CN;
Abstract
A method for manufacturing a graphene transistor based on self-aligning technology, the method comprising: on a substrate (), forming sequentially graphene material (), a metal film (), and photoresist patterns () formed by lithography, removing the metal film and the graphene material uncovered by the photoresist, forming an active area, and metal electrodes () of a source, a gate, and a drain of the transistor, wherein the source electrodeand drain electrodeare connected with a metal of the active region, and forming gate photoresist patterns () between the source and the drain by lithography, etching off the exposed metal, forming sequentially a seed layer (), a gate dielectric layer (), and gate metal () on the exposed graphene surface, and finally forming a graphene transistor.