The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
May. 18, 2015
Nxp B.v., Eindhoven, NL;
Godefridus Adrianus Maria Hurkx, Best, NL;
Jeroen Antoon Croon, Waalre, NL;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Jan Sonsky, Leuven, BE;
Stephen John Sque, Eindhoven, NL;
Andreas Bernardus Maria Jansman, Nuenen, NL;
Markus Mueller, Brussels, BE;
Stephan Heil, Eindhoven, NL;
Tim Boettcher, Lauenbrueck, DE;
NXP B.V., Eindhoven, NL;
Abstract
Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.