The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Aug. 13, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Gerhard Schmidt, Wernberg-Wudmath, AT;
Josef Georg Bauer, Markt Indersdorf, DE;
Mario Barusic, Seebogen, AT;
Oliver Humbel, Maria Elend, AT;
Hans Millonig, Feistritz/Gail, AT;
Werner Schustereder, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 21/266 (2006.01); H01L 21/225 (2006.01); H01L 21/263 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/225 (2013.01); H01L 21/266 (2013.01); H01L 21/2636 (2013.01); H01L 29/0804 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01);
Abstract
Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.