The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 06, 2012
Lin Cheng, Chapel Hill, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
Michael John O'loughlin, Chapel Hill, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
Michael John O'Loughlin, Chapel Hill, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (mΩ·cm) and even more preferably less than 5 mΩ·cm. In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 mΩ·cmand even more preferably less than 7 mΩ·cm. In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 mΩ·cmand even more preferably less than 10 mΩ·cm. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.