The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Oct. 26, 2011
Applicants:

Allan David Crane, Gywnedd, GB;

Sean Joseph Loddick, Warwickshire, GB;

David Hinchley, Leicestershire, GB;

Inventors:

Allan David Crane, Gywnedd, GB;

Sean Joseph Loddick, Warwickshire, GB;

David Hinchley, Leicestershire, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01C 7/12 (2006.01); H03K 17/687 (2006.01); H01L 29/06 (2006.01); H01L 23/051 (2006.01); H01L 23/31 (2006.01); H01L 23/60 (2006.01); H01L 23/00 (2006.01); H01L 25/11 (2006.01); H01L 29/12 (2006.01); H03K 17/56 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 23/051 (2013.01); H01L 23/3185 (2013.01); H01L 23/60 (2013.01); H01L 24/06 (2013.01); H01L 24/72 (2013.01); H01L 25/117 (2013.01); H01L 29/0661 (2013.01); H01L 29/12 (2013.01); H03K 17/56 (2013.01); H01L 24/48 (2013.01); H01L 29/0619 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/4847 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A semiconductor device or power electronic device is described. The device includes a pair of pole pieces, each having a profiled surface. A semiconductor body or wafer, preferably of wide bandgap electronic material, is located between the pole pieces and includes contact metallization regions. The semiconductor body produces an electric field that emerges from an edge region. Passivation means includes a first or radially inner part in contact with the edge region of the semiconductor body and which diffuses the electric field as it emerges from the edge region and a second or radially outer part. The second part of the passivation is in contact with the first part and provides a substantially void-free interface with the profiled surface of each pole piece. The device may be immersed in a dielectric liquid.


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