The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Nov. 12, 2013
Hiroyuki Miyake, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Yoshifumi Tanada, Takayama, JP;
Manabu Sato, Tochigi, JP;
Toshinari Sasaki, Shinagawa, JP;
Kenichi Okazaki, Tochigi, JP;
Junichi Koezuka, Tochigi, JP;
Takuya Matsuo, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Hiroyuki Miyake, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Yoshifumi Tanada, Takayama, JP;
Manabu Sato, Tochigi, JP;
Toshinari Sasaki, Shinagawa, JP;
Kenichi Okazaki, Tochigi, JP;
Junichi Koezuka, Tochigi, JP;
Takuya Matsuo, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.