The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Mar. 13, 2014
Icemos Technology Ltd., Belfast, GB;
Kenji Sugiura, Kanagawa-ken, JP;
Takeshi Ishiguro, Fukushima-ken, JP;
Other;
Abstract
A semiconductor device includes a semiconductor layer having first and second main surfaces, with the first surface defining a plane containing first and second perpendicular axes. A first gate is disposed proximate the first main surface and extends parallel to the first axis. A dielectric layer is formed on the first main surface and separates the first gate from the first main surface. First and second trenches are formed in the semiconductor layer proximate the first gate and spaced apart in a direction parallel to the first axis. First and second pluralities of contact windows are formed in the dielectric layer to expose the first main surface and are respectively arranged in first and second rows extending between the first and second trenches in a direction parallel to the first axis. Adjacent contact windows in each first row are separated only by the dielectric layer.