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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9349694 B1

PDFFull Text
Date of Patent:
May. 24, 2016

Filed:

Aug. 29, 2014

Method of manufacturing a semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Katsunori Shibuya, Miegun Kawgoe Mie, JP;

Soichi Homma, Yokkaichi Mie, JP;

Yuusuke Takano, Yokkaichi Mie, JP;

Shinpei Ishida, Tsushima Aichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/552 (2006.01); H01L 21/78 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/78 (2013.01); H01L 23/3121 (2013.01); H01L 24/97 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/181 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a substrate. A semiconductor chip is disposed on a first surface of the substrate. The semiconductor chip is covered with a sealing material. A front surface and a side surface of the sealing material are covered with a conductive film. On an outer edge of a substrate-side of the semiconductor device, a step or a trench is formed.

Find Patent Forward Citations

Shibuya, Katsunori. (2016). Method of manufacturing a semiconductor device (U.S. Patent No. 9349694). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9349694

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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