The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 06, 2014
Applicant:
Takashi Nakazawa, Gyeonggi-do, KR;
Inventor:
Takashi Nakazawa, Gyeonggi-do, KR;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 21/768 (2006.01); H01L 27/24 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76802 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/0207 (2013.01);
Abstract
A memory device according to embodiments includes a cell array region. The cell array region comprises a plurality of transistors sharing a word line, a plurality of memory elements, and a plurality of first contacts configured to connect the plurality of transistors with the plurality of memory elements, respectively, and aligned with a pitch. The memory device further comprises a second contact positioned at the pitch, along an extension of a row of the plurality of first contacts, outside the cell array region, and configured to be in contact with the word line.