The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
May. 02, 2012
Yu Cheng, Fremont, CA (US);
Junwen Huang, Shanghai, CN;
Huiyuan Pei, Shanghai, CN;
Jiangang Liu, Shanghai, CN;
Youngjin Choi, San Ramon, CA (US);
Liang Wang, Cupertino, CA (US);
Yu Cheng, Fremont, CA (US);
Junwen Huang, Shanghai, CN;
Huiyuan Pei, Shanghai, CN;
Jiangang Liu, Shanghai, CN;
Youngjin Choi, San Ramon, CA (US);
Liang Wang, Cupertino, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming conductive contacts in a dielectric layer is provided. Partial vias are etched into the dielectric layer through a via mask. Trenches are etched into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias. Tops of the trenches or vias are rounded.