The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jan. 14, 2014
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Yoon Soo Jang, Chungcheongbuk-do, KR;
Assignee:
SK HYNIX INC., Icheon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/3427 (2013.01); H01L 27/11582 (2013.01); G11C 16/0408 (2013.01); H01L 27/1157 (2013.01);
Abstract
A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes memory cells stacked on a substrate. The method includes applying a reference voltage to an unselected drain select line, applying a drain selection voltage to a selected drain select line, and applying a word line voltage to a normal word line. Before the word line voltage is applied to the normal word line, a positive voltage is applied to a dummy word line to bounce the unselected drain select line.