The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
May. 16, 2014
Lsi Corporation, San Jose, CA (US);
Sahilpreet Singh, Bangalore, IN;
Anjana Das, Bangalore, IN;
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
A memory cell having integrated read and write assist functionality includes a storage element and first and second switching circuits. The first switching circuit is configured to selectively couple a first internal storage node of the storage element with a first bit line. The second switching circuit is configured to selectively couple a second internal storage node of the storage element with a second bit line. During a read operation, at least one of the first and second switching circuits is configured to increase a switching threshold of at least one inverter in the storage element. During a write operation, at least one of the first and second switching circuits is configured such that ground bounce associated with at least one of the first and second switching circuits assists in writing a logical state of the memory cell.