The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Jun. 17, 2015
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Anirban Roy, Austin, TX (US);

Thomas Jew, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/00 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

A non-volatile memory device includes an array of non-volatile (NV) memory cells organized in pairs. Each pair is included with a transistor to form a memory unit. Each unit is coupled to a bit line, a word line, and a pair of source lines. The NV elements are programmable to either a relatively high resistance or relatively low resistance and the particularly resistance is established, by converting one resistance type to the other or maintaining the existing resistance type the direction of current through the NV element. A bit is formed from two NV cells in different memory units which are programmed to different resistance types and thereby provide a differential pair from which the logic state of the bit can be determined.


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