The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Aug. 31, 2012
Applicants:

Robert G. Biskeborn, Hollister, CA (US);

Calvin S. Lo, Saratoga, CA (US);

Cherngye Hwang, San Jose, CA (US);

Andrew C. Ting, El Prado, NM (US);

Inventors:

Robert G. Biskeborn, Hollister, CA (US);

Calvin S. Lo, Saratoga, CA (US);

Cherngye Hwang, San Jose, CA (US);

Andrew C. Ting, El Prado, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3163 (2013.01); H01J 37/32816 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source.


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