The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Sep. 28, 2010
Applicants:

Sang-wook Kim, Yongin-si, KR;

Jae-chul Park, Suwon-si, KR;

Sun-il Kim, Osan-si, KR;

Chang-jung Kim, Yongin-si, KR;

Inventors:

Sang-wook Kim, Yongin-si, KR;

Jae-chul Park, Suwon-si, KR;

Sun-il Kim, Osan-si, KR;

Chang-jung Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/08 (2006.01); G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
G01T 1/242 (2013.01); H01L 31/085 (2013.01);
Abstract

Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.


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