The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Dec. 24, 2012
The University of Western Ontario, London, CA;
Zhifeng Ding, London, CA;
Falong Jia, Wuhan, CN;
Dave Love, Orillia, CA;
Myong In Oh, London, CA;
Daniel Vaccarello, Mississauga, CA;
Amy Tapley, Amherstburg, CA;
The University of Western Ontario, London, ON, CA;
Abstract
A one-pot approach for preparing ArSH capped CuZnSnS, CuZnSn(SSe), CuSnS, CuInS, and CuIn(SSe)nanocrystals is provided. Examples involving reacting copper (II) acetylacetonate and indium chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed CuInS, nanocrystals having a size of about 100 nm were prepared. Examples involving reacting copper (II) acetylacetonate, zinc chloride, and tin chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed CuZnSnSnanocrystals having a size of about 2 nm were prepared. Nanociystals obtained were found to have excellent crystallinity, stoichiometry, and high collective photovoltaic activity without the need for postprocessing such as high temperature annihilation in a sulfur atmosphere.