The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9346672 B1

PDF
Full Text
Expired
Date of Patent:
May. 24, 2016

Filed:

Aug. 04, 2009
Applicant:

Jinqiu Zhang, Fremont, CA (US);

Inventor:

Jinqiu Zhang, Fremont, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01); G11B 5/31 (2006.01);
U.S. Cl.
CPC ...
B82Y 10/00 (2013.01); B82Y 25/00 (2013.01); G11B 5/3163 (2013.01); Y10T 29/49032 (2015.01); Y10T 29/49044 (2015.01);
Abstract

A method for forming a write pole comprises the steps of providing a structure comprising a substrate layer, a ruthenium layer over the substrate layer, and a tantalum layer over the ruthenium layer, providing an opening in the tantalum layer over a portion of the ruthenium layer, performing a first reactive ion etching step on the portion of the ruthenium layer under the opening in the tantalum layer to provide an opening in the ruthenium layer over a portion of the substrate layer, performing a second reactive ion etching step on the portion of the substrate layer under the opening in the ruthenium layer to form a damascene trench therein, and filling the damascene trench with a magnetic material to form the write pole.


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