The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 22, 2015
Infineon Technologies Ag, Neubiberg, DE;
Adrian Finney, Villach, AT;
Bogdan-Eugen Matei, Braila, RO;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A monolithic integrated circuit includes a low-voltage control circuit, a vertical power transistor, and a source follower. The vertical power transistor includes at least a drain. The source follower includes a drain that is coupled to the drain of the vertical power transistor, a gate that is coupled to a limit voltage node, and a source that is coupled to a high impedance node. The source follower is arranged such that a source voltage at the source of the source follower is a voltage-limited version of the drain voltage of the vertical power transistor. The low-voltage control circuit includes a driver and protection circuit that is arranged to detect the source voltage, to drive the vertical power transistor, and to adjust how the vertical power transistor is biased based, at least in part, on the source voltage.