The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Sep. 15, 2014
Applicants:
Ronald J. Lipka, Northborough, MA (US);
Akhil K. Garlapati, Lexington, MA (US);
Inventors:
Ronald J. Lipka, Northborough, MA (US);
Akhil K. Garlapati, Lexington, MA (US);
Assignee:
Qualtre, Inc., Marlborough, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H02M 3/07 (2013.01);
Abstract
An charge pump architecture capable of generating ultra high DC voltages but implemented in low voltage CMOS technology uses a cascade of NMOS stages with the bulk terminal of the latter stages biased to a voltage just below the reverse breakdown of the parasitic bulk diode. The bias voltage is tapped from a lower voltage point within the charge pump. The upper limit of the output voltage is then increased to the maximum allowable oxide voltage plus the parasitic diode reverse bias breakdown voltage.