The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

May. 29, 2013
Applicant:

Ford Global Technologies, Llc, Dearborn, MI (US);

Inventors:

Patrick Pietrasz, Southgate, MI (US);

Jun Yang, Ann Arbor, MI (US);

Assignee:

FORD GLOBAL TECHNOLOGIES, LLC, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01M 4/92 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/442 (2006.01); H01M 4/88 (2006.01); H01M 8/10 (2016.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01M 4/925 (2013.01); C23C 16/0272 (2013.01); C23C 16/18 (2013.01); C23C 16/442 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/45555 (2013.01); C23C 16/4417 (2013.01); H01M 4/8803 (2013.01); H01M 2008/1095 (2013.01); Y02E 60/50 (2013.01);
Abstract

In at least one embodiment, a method of forming a platinum thin film is provided, including performing a first atomic layer deposition (ALD) process on a substrate using a first platinum organometallic precursor in a first step and an oxidizing precursor in a second step to form an at least partially coated substrate. A second ALD process is then performed on the at least partially coated substrate using a second platinum organometallic precursor in a first step and a reducing precursor in a second step to form a thin film of platinum on the substrate. The first ALD process may be performed for 5 to 150 cycles to nucleate platinum on the substrate surface and the second ALD process may be performed thereafter to grow the thin film and remove surface oxides. A conformal platinum thin film having a thickness of 1 to 10 monolayers may be deposited.


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