The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Apr. 09, 2012
Chan-jin Park, Yongin-si, KR;
Sun-jung Kim, Yongin-si, KR;
Soon-oh Park, Suwon-si, KR;
Hyun-su Ju, Hwaseong-si, KR;
Soo-doo Chae, Yongin-si, KR;
Chan-Jin Park, Yongin-si, KR;
Sun-Jung Kim, Yongin-si, KR;
Soon-Oh Park, Suwon-si, KR;
Hyun-Su Ju, Hwaseong-si, KR;
Soo-Doo Chae, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.