The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Nov. 06, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/14 (2010.01); H01L 33/48 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/0033 (2013.01); H01L 33/145 (2013.01); H01L 33/48 (2013.01); H01L 33/62 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/12032 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.