The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

May. 27, 2014
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Byungyeon Choi, Seoul, KR;

Hyunseoung Ju, Seoul, KR;

Yonggyeong Lee, Seoul, KR;

Giseok Hong, Seoul, KR;

Jihee No, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/38 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further, the second electrode include a reflective layer disposed on the second semiconductor layer; a metal layer disposed on a side surface of the reflective layer and on a top surface of reflective layer; a first anti-oxidation layer on the metal layer; and a second anti-oxidation layer on the first anti-oxidation layer. In addition, the second anti-oxidation layer is more than 10 times thicker than the first anti-oxidation layer.


Find Patent Forward Citations

Loading…