The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Nov. 24, 2014
Applicants:

Lg Electronics Inc., Seoul, KR;

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jong Wook Kim, Gyeonggi-do, KR;

Hyun Kyong Cho, Seoul, KR;

Gyu Chul Yi, Gyeongsangbuk-do, KR;

Sung Jin An, Gyeongsangbuk-do, KR;

Jin Kyoung Yoo, Gyeongsangbuk-do, KR;

Young Joon Hong, Gyeongsangbuk-do, KR;

Assignees:

LG ELECTRONICS INC., Seoul, KR;

LG Innotek Co., Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/36 (2010.01); H01L 33/60 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/60 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01);
Abstract

A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.


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