The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 31, 2014
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Abstract
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high light efficiency achieved by relaxing a piezoelectric field generated in a light-emitting layer without deteriorating the crystal quality of the light-emitting layer, and a method for producing the same. The light-emitting device has a light-emitting layer in which layer units are repeatedly deposited. Each layer unit comprises an AlGaN layer, an n-type InGaN layer, an InGaN layer, a GaN layer, and an AlGaN layer which are deposited in this order on the n-side superlattice layer. The n-type InGaN layer is doped with Si at a Si concentration of 1×10/cmto 3×10/cm.