The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Aug. 23, 2012
Applicants:
Joachim Hertkorn, Alteglofsheim, DE;
Karl Engl, Pentling, DE;
Berthold Hahn, Hemau, DE;
Andreas Weimar, Regensburg, DE;
Inventors:
Joachim Hertkorn, Alteglofsheim, DE;
Karl Engl, Pentling, DE;
Berthold Hahn, Hemau, DE;
Andreas Weimar, Regensburg, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/22 (2010.01); H01L 33/02 (2010.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/0079 (2013.01); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.