The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Feb. 06, 2015
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Su Hwan Oh, Daejeon, KR;

Ki-Hong Yoon, Daejeon, KR;

Kisoo Kim, Daejeon, KR;

O-Kyun Kwon, Daejeon, KR;

Oh Kee Kwon, Daejeon, KR;

Byung-Seok Choi, Daejeon, KR;

Jongbae Kim, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01S 5/026 (2006.01); H01S 5/14 (2006.01); H01L 33/20 (2010.01); B82Y 20/00 (2011.01); H01S 5/022 (2006.01); H01S 5/062 (2006.01); H01S 5/10 (2006.01); H01S 5/223 (2006.01); H01S 5/343 (2006.01); H01S 5/22 (2006.01); G02B 6/30 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); B82Y 20/00 (2013.01); H01L 33/0045 (2013.01); H01L 33/20 (2013.01); H01S 5/026 (2013.01); H01S 5/141 (2013.01); G02B 6/305 (2013.01); G02B 6/4206 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01S 5/02216 (2013.01); H01S 5/02284 (2013.01); H01S 5/06226 (2013.01); H01S 5/101 (2013.01); H01S 5/1014 (2013.01); H01S 5/2213 (2013.01); H01S 5/2224 (2013.01); H01S 5/2231 (2013.01); H01S 5/34306 (2013.01); H01S 2301/176 (2013.01);
Abstract

Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.


Find Patent Forward Citations

Loading…