The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Dec. 09, 2010
Applicants:

Rodrigo Ferrão DE Paiva Martins, Charneca da Caparica, PT;

Elvira Maria Correia Fortunato, Charneca da Caparica, PT;

Pawel Jerzy Wojcik, Devlin, PL;

Inventors:

Rodrigo Ferrão De Paiva Martins, Charneca da Caparica, PT;

Elvira Maria Correia Fortunato, Charneca da Caparica, PT;

Pawel Jerzy Wojcik, Devlin, PL;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); B82Y 40/00 (2011.01); H01L 51/00 (2006.01); H01L 31/18 (2006.01); H01G 9/20 (2006.01); B82Y 20/00 (2011.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01G 9/2031 (2013.01); H01L 31/02366 (2013.01); H01L 51/0005 (2013.01); Y02E 10/542 (2013.01); Y02E 10/549 (2013.01);
Abstract

The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars () deposited from suspensions e.g. by inkjet printing. Said pillars additionally increase the surface area of the device composed of an interpenetrating network of semiconductor particles of mesoscopic (2-50 nm) size forming junctions. In the present invention the active surface area is significantly increased when compared to previous flat structures (a,), being fabricated preferably by inkjet patterning. Additionally, the invention allows for production of much more functional devices when compared with conventional mesoscopic PV cells due to smaller structure density what makes the layer more resistive to mechanical failure when bending. The invention also describes the device substrate (), contact and electrode (), ion conductor () and fabrication parameters (h, d).


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